4.7. МОДЕЛИРОВАНИЕ НА ЭЛЕКТРОННОМ УРОВНЕ И SPICE

Один из основных форматов для обмена электрическими схемами это SPICE
(SPICE - Simulation Program with Integrated Circuit Emphasis)
(SPICE - это программа моделирования радиоэлектронных компонентов).

Большинство програм моделирования поддерживают экспорт и импорт в
текстовой формат SPICE2.

К сожалению модели микроэлектронных приборов "вшиты" в SPICE и
хотя можно тюнить параметры - все равно HDL-AMS языки дают больше контроля
над происходящими процессами.



  
  Очень краткое описание SPICE языка: 
 

* КОММЕНТАРИЙ
[ТИП_ИМЯ_КОМПОНЕНТА] [УЗЕЛ1] .. [УЗЕЛ_N] [ПАРАМЕТР_1] ... [ПАРАМЕТР_N]
.END		ставится в конце файла

Типы компонентов
 ---------------------------------------------------------------------
Rxx	resistor				резистор
Lxx	inductor				катушка индуктивности
Cxx	capacitor				конденсатор
Vxx	voltage source          		источник напряжения
Ixx	current source				источник тока
Exx	voltage controlled voltage source
Hxx	current controlled voltage source
Fxx	current controlled current source
Gxx	voltage controlled current source
Dxx	diode					диод
Jxx	junction FET				JFET транзистор
Mxx	MOSFET					МОС транзистор
Bxx	GaAsFET					транзистор на арсениде галлия GaAs
Qxx	BJT					биполярный транзистор
 ---------------------------------------------------------------------




  
  Резистор 
 
 ------------------------------------
Rxx	NODE1	NODE2	RESISTIVITY
R1	1	0	1.0ohm
R3	7	8	4M
 ------------------------------------




  
  Источник напряжения 
 
 ------------------------------------
Vxx	V_NODE	GND_NODE  VOLTAGE
V1	1	0	  3.0volt
V2	2	3	  4K
 ------------------------------------




  
  Источник тока 
 
 ------------------------------------
IXX	NODE	NODE	CURRENT
I4	2	4	15m			// 0.015 A
 ------------------------------------




  
  Конденсатор 
 
 ------------------------------------
Cxx	NODE	NODE	CAPACITY
C1	1	0	1.5u		(microfarad)
C2	2	3	4pF
 ------------------------------------



  
  Индуктивность 
 
 ------------------------------------
Lxx	NODE	NODE	INDUCTIVITY
L3	1	0	10m
 ------------------------------------



  
  Voltage controlled voltage source 
 
--------------------------------------
Exx	ONODE	ONODE	INODE	INODE	GAIN
E3	1	2	3	4	5
E4	1	2      (3,	4)	10
--------------------------------------
E3:	V(1-2) = V(3-4) * 5
E4:	V(1-2) = V(3-4) * 10




Для диодов, транзисторов итд используются модели

--------------------------------------
.MODEL	NAME	TYPENAME  (PARAMETER=VALUE,...)
--------------------------------------

TYPENAME is:
	CAP	capacitor
	IND	inductor
	RES	resistor
	D	diode
	NPN	BJT n-p-n
	PNP	BJT p-n-p
	NJF	n-JFET
	PJF	p-JFET
	NMOS	n-channel MOSFET
	PMOS	p-channel MOSFET
	GASFET	GaAs n-JFET
	CORE	non-linear magnetics
	VSWITCH voltage-controlled switch
	ISWITCH	current-controlled switch




  
  Параметры модели диода 
 


 ------------------------------------
Dxx	+NODE	-NODE	MODEL	
D5	5	7	MyDiode
 ------------------------------------

	-------------------------------------------------------------
	IS	Saturation current				A
	N	Emission coefficient                            1
	RS	Parasitic resistance            		Ohm
	CJO	zero-bias p-n capacitance       		Farad
	VJ	p-n potencial                   		V
	M	p-n grading coefficient                 	1
	FC	forward-bias depletion capacitance coefficient  1
	TT	transmit time					sec
	BV	reverse breakdown voltage			V
	IBV	reverse breakdown current			A
	EG	bandgap voltage					eV
	XTI	IS temperature exponent                         1
	KF	flicker noise coefficient                       1
	AF	flicker noise exponent                          1
	-------------------------------------------------------------




  
  Параметры модели MOSFET 
 
	
 ------------------------------------
Mxx	DRAIN	GATE	SOURCE	BULK	MODEL
	NODE	NODE	NODE	NODE    NAME
M1	2	3	5	0	NMDideal
 ------------------------------------

	-------------------------------------------------------------
	L	channel length					meter
	W	channel width					meter
	LD	lateral diffusion (length)			meter
	LW	lateral diffusion (width)			meter
	VTO	zero-bias threshold voltage			meter
	KP	transconductance				amp/volt^2
	GAMMA	bulk treshold parameter				volt^(1/2)
	PHI	surface potencial				volt
	LAMBDA	channel-length modulation			1/volt
	RD	drain ohmic resistance				ohm
	RS	source ohnic resistance				ohm
	RG	gate ohmic resistance				ohm
	RB	bulk ohmic resistance				ohm
	RDS	drain-source shunt resistance			ohm
	RSH	drain-source diffusion sheet resistance		ohm
	IS	bulk p-n saturation current			A
	JS	bulk p-n saturation current area		A/meter^2
	PB	bulk p-n potencial				volt
	CBD	bulk-drain zero-bias p-n capacitance		farad
	CBS	bulk-source zero-bias p-n capacitance		farad
	CJ	bulk p-n zero-bias bottom capacitance/area	farad/meter^2
	CJSW	bulk p-n zero-bias perimeter capacitance/area	farad/meter
	MJ	bulk p-n bottom grading coefficient		1
	MJSW	bulk p-n sidewall grading coefficient		1
	FC	bulk forward-bias capacience coefficient	1
	CGSO	gate-source overlap capacitance/channel width	farad/meter	
	CGDO	gate-drain overlap capacitance/channel width	farad/meter	
	CGBO	gate-bulk overlap capacitance/channel width	farad/meter	
	NSUB	substrate dopping density			1/cm^3
	NSS	surface state density				1/cm^2
	NFS	fast surface state density			1^cm^2
	TOX	oxide thickness					meter
	TPG	gate material type (-1=as bulk,+1 opposite, 0 = aluminium)
	XJ	metalurgical junction depth			meter
	UO	surface mobility				cm^2/(V*sec)
	VMAX	maximal drift velocity				meter/sec
	XOC	fraction of channel charge attributed to drain  1
	DELTA	width effect on threshold			1
	KF	flicker noise coefficient                       1
	AF	flicker noise exponent                          1
	.... etc
	-------------------------------------------------------------



  
  BJT 
 

 ------------------------------------
Qxx	COLLECT	BASE	EMMIT	BULK	  MODEL
	NODE    NODE	NODE    NODE      NAME
Q1	2	3	5	0	  NMDideal
 ------------------------------------

	Параметры модели BJT приводить не будем





  
  Примеры 
 

  

-----------------------------
* Simple Circuit
Vin   1  0  3.0volt
R1    1  2  1.0ohm
R2    2  0  2.0ohm
.END
------------------------------

C1    1  0  1pF



  

	
Пример схемы CMOS инвертора:
----------------------------------
* Oscilloscope(s)
.PROBE V(14, 0)
R_o_scope_0_0 14 0 1Tohm
.PROBE V(15, 0)
R_o_scope_0_1 15 0 1Tohm

* Function Generator(s)
V_fg_plus 14 0 DC 0V AC 3V
+PULSE(-3V 3V 0 100ns 100ns 50ms 100ms)

* Battery(s)
V1 12 0 DC 5 

* 3-Terminal Depletion N-MOSFET(s)
M_N_DM_Q1 15 14 0 0 NMDideal

* 3-Terminal Depletion P-MOSFET(s)
M_P_DM_Q2 15 14 12 12 PMDideal

* Connector(s)
* node = 0, label = 
* node = 1, label = 
* node = 1, label = 
* node = 2, label = 
* node = 0, label = 

* Misc
.TRAN 1.4ms 700ms 0s 1.4ms 

.MODEL NMDideal NMOS(VTO=0 KP=20u LAMBDA=0 PHI=600m GAMMA=0 Rd=0 Rs=0
+IS=10f Cgbo=0 Cgdo=0 Cgso=0 Cbd=0 Cbs=0 PB=800m RSH=0 CJ=0 MJ=500m CJSW=0
+MJSW=500m JS=0 TOX=100n NSUB=0 NSS=0 TPG=1 LD=0 U0=600 KF=0 AF=1 FC=500m
+TNOM=27)

.MODEL PMDideal PMOS(VTO=0 KP=20u LAMBDA=0 PHI=600m GAMMA=0 Rd=0 Rs=0
+IS=10f Cgbo=0 Cgdo=0 Cgso=0 Cbd=0 Cbs=0 PB=800m RSH=0 CJ=0 MJ=500m CJSW=0
+MJSW=500m JS=0 TOX=100n NSUB=0 NSS=0 TPG=1 LD=0 U0=600 KF=0 AF=1 FC=500m
+TNOM=27)

.OPTIONS ITL4=25
.END
----------------------------------